Heterojunction IMPATT diodes

Abstract

Heterojunction IMPATT diodes, which incorporate an abrupt GaAs/Al/sub 0.3/Ga/sub 0.7/As p/N heterojunction in place of the standard p/n junction, have shown a number of significant properties that represent a considerable technological advance. Ku-band experimental devices exhibit up to 2.0 dB higher power, superior DC characteristics, and 3-6 dB less phase noise content. These and other properties are examined in detail, and a first-order theory of operation is proposed.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">&gt;</ETX>