Hot Forming to Improve Memory Window and Uniformity of Low-Power HfOx-Based RRAMs

Abstract

A method of forming RRAM devices at elevated temperatures (hot forming) is proposed. By drastically reducing time-to-forming, this hot forming method enables forming to be performed using low constant voltage biases, which is shown to increase resistance of the conductive filament, lower operational current, increase memory window and improve device-to-device uniformity.