Midwavelength Infrared Avalanche Photodiode Using InAs–GaSb Strain Layer Superlattice

Abstract

<para xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> InAs–GaSb strain layer superlattice p<emphasis><formula><tex>$^{+}$</tex> </formula></emphasis>-n<emphasis><formula><tex>$^{-}$</tex></formula></emphasis>-n avalanche photodiodes (APDs) are fabricated using a newly introduced electron-beam aided zinc sulfide deposition. Temperature- dependent measurements were performed on 300<emphasis><formula formulatype="inline"> <tex>$\,\times\,$</tex></formula></emphasis>300 <emphasis><formula formulatype="inline"> <tex>$\mu$</tex></formula></emphasis>m<emphasis><formula formulatype="inline"> <tex>$^{2}$</tex></formula></emphasis> mesa etched APDs. The effect of passivation was also studied on the diode characteristics and APD performances. Temperature-dependent gain strongly correlates with avalanche mechanism. </para>