Recent progress of high power GaN‐based violet laser diodes

Abstract

High performance laser diodes were fabricated on lateral epitaxial overgrown GaN layers on sapphire substrates. The threshold current of the LDs was strongly dependent on the dislocation density. A low threshold voltage was obtained using highly Mg doped contact layers. The lifetime of LDs was also influenced by the operation voltage. Threshold current density and threshold voltage were 3.74 kA/cm2 and 4.8 V, respectively. The LDs showed a lifetime of 1,000 hs at 50 °C under automatic power controlled conditions of 30 mW. (© 2003 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)