Publication | Closed Access
An improved stripe-cell SEGR hardened power MOSFET technology
25
Citations
12
References
2001
Year
Low-power ElectronicsElectrical EngineeringEngineeringHexagonal CellsRadiation-hard DesignPower DeviceBias Temperature InstabilityStripe-cell StructureComputer EngineeringSingle Event EffectsPower Semiconductor DeviceWell-established Radiation-hardened TechnologyPower ElectronicsMicroelectronicsRadiation OncologySemiconductor DevicePower Mosfet Technology
A new single-event gate rupture radiation-hardened power MOSFET is reported. It is based upon a well-established radiation-hardened technology described in 1996. The hexagonal cells used in prior work are replaced with a stripe-cell structure producing demonstrated performance improvements.
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