Physica Scripta · 1999 · 21 citations · 0 references
EngineeringElectrical EngineeringElectronic MaterialsMicroelectronicsSemiconductor DevicesBipolar Junction TransistorsDevice CharacterizationDevice SimulationMetal-oxide-semiconductor Field-effect TransistorsSemiconductor Device MaterialsWide-bandgap Semiconductor DevicesCurrent DensitySafe Operating Limits
A new TIGBT (Trench Insulated Gate Bipolar Transistor) with a trench cathode is proposed to suppress the latch-up which is a key problem to limit the maximum operating current. The efficiency of the proposed device is verified by numerical analysis with MEDICI. Trench cathode TIGBT could suppress the latch-up at anode voltage of 300 V and current density of 19 000 A/cm2 while planar IGBT and conventional TIGBT latch at the anode current density of 1300 and 4200 A/cm2, respectively. Forward voltage drops of trench cathode TIGBT, conventional TIGBT and planar IGBT are 1.53 V, 1.48 V and 2.43 V, respectively. In addition, trench cathode TIGBT has very large FBSOA (Forward Biased Safe Operating Area) compared with that of conventional TIGBT and planar IGBT.