IEEE Transactions on Nuclear Science · 2003 · 36 citations · 11 references
EngineeringRobustness TestingNew Test ProtocolSemiconductor DeviceHardware SecurityReliability EngineeringNanoelectronicsElectronic EngineeringSystems EngineeringReliabilityElectrical EngineeringBias Temperature InstabilityComputer EngineeringSingle Event EffectsPower System ProtectionTest ProtocolsMicroelectronicsDevice ReliabilityDesign For TestingSee CharacterizationSoftware TestingCircuit ReliabilityPower Mosfets
The test protocols for power MOSFETs used in the manufacturer's specification sheets are inadequate in that they do not represent a realistic worst-case condition. In addition, the applicable single-event effects (SEE) test methods and guidelines do not provide sufficient details to the user as to what conditions should be used, placing an undue burden on them. This paper addresses several of these deficiencies and others. We present a new test protocol; we suggest a new approach to describe the SEE response; and we provide a model to predict critical ion energies that should produce a worst-case response.
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P. Bowler · Electronics and Power · 1978 · 233 citations
Semiconductor Devices, Electrical Engineering, Engineering +6