Increasing the noise margin in organic circuits using dual gate field-effect transistors

Abstract

Complex digital circuits reliably work when the noise margin of the logic gates is sufficiently high. For p-type only inverters, the noise margin is typically about 1V. To increase the noise margin, we fabricated inverters with dual gate transistors. The top gate is advantageously used to independently tune the threshold voltage. The shift can be quantitatively described by ΔVth=(Ct∕Cb)Vtopgate, where Ct and Cb are the top and bottom gate capacitances. We show that by adjusting the top gate biases, the noise margin of dual gate inverters can be significantly improved up to about 5V.