IEEE Journal of Solid-State Circuits · 2005 · 48 citations · 4 references
EngineeringComputer EngineeringElectrical EngineeringMicroelectronicsSemiconductor DevicesVlsi DesignCmos Circuit DesignGate Drive CircuitsMemory DevicesMemory Subsystem DesignMagnetoresistive Random-access MemoryMemory Circuit DesignNon-volatile Memory DesignRandom Access Memory (Ram)Random-access Memory
A 16-Mb magnetic random access memory (MRAM) is demonstrated in 0.18-/spl mu/m three-Cu-level CMOS with a three-level MRAM process adder. The chip, the highest density MRAM reported to date, utilizes a 1.42/spl mu/m/sup 2/ 1-transistor 1-magnetic tunnel junction (1T1MTJ) cell, measures 79 mm/sup 2/ and features a /spl times/16 asynchronous SRAM-like interface. The paper describes the cell, architecture, and circuit techniques unique to multi-Mb MRAM design, including a novel bootstrapped write driver circuit. Hardware results are presented.
4
A low power 1 Mbit MRAM based on 1T1MTJ bit cell integrated with copper interconnects
M. Durlam, P. Naji, A. Omair et al. · 2003 · 46 citations
Engineering, Computer Engineering, Electrical Engineering +16