IEEE Photonics Technology Letters · 1991 · 24 citations · 8 references
Wide-bandgap SemiconductorPhotonicsElectrical EngineeringEngineeringLaser ScienceSemiconductor LasersHeatsink TemperaturesApplied PhysicsLaser ApplicationsHigh-temperature OperationCavity WidthUncoated DevicesLaser MaterialAluminum Gallium NitrideCategoryiii-v SemiconductorOptoelectronicsHigh-power Lasers
Strained layer AlInGaAs-AlGaAs graded-index separate-confinement heterostructure single-quantum-well diode lasers with cavity width and length of 500 and 1000 mu m, respectively, have been operated continuous-wave (CW) at heatsink temperatures up to 125 degrees C, with output power up to 4.9 W per facet and power efficiency as high as 49% measured at 10 degrees C. Promising results have been obtained in initial reliability tests on uncoated devices at heatsink temperatures of 10 and 50 degrees C.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
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Long-lived InGaAs quantum well lasers
S.E. Fischer, R. G. Waters, D. Fekete et al. · Applied Physics Letters · 1989 · 66 citations
High-temperature operation of InGaAs strained quantum-well lasers
Richard J. Fu, C.S. Hong, Eric Y. Chan et al. · IEEE Photonics Technology Letters · 1991 · 43 citations