The Dosimetric Performance of RADFETs in Radiation Test Beams

Abstract

The radiation-sensitive field-effect transistor (RADFET) is a specialized design of metal-oxide-semiconductor field-effect transistor (MOSFET). This paper gives selected data on the response of REM RADFETs to ionizing radiation. The period extends from 1975 to the present. A wide variety of test beams was used. It includes gamma-ray sources, X-ray sources, medical LINACs, reactors and high-energy charged-particle accelerators. The responses and their measurement are mainly due to the growth of trapped oxide charge, represented by shift in the threshold voltage (V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">T</sub> ). The dependence of charge growth with exposure bias and oxide thickness is described. Also described are instabilities such as room-temperature and isochronal annealing (known as "fade"), drift due to border states and the effect of radiation on the temperature coefficient of threshold voltage.