Low-threshold operation of 1.3-/spl mu/m GaAsSb quantum-well lasers directly grown on GaAs substrates

Abstract

GaAsSb quantum-well (QW) edge-emitting lasers grown on GaAs substrates were demonstrated. The optical quality of the QW was improved by optimizing the growth conditions and introducing a multi-QW to increase the gain. As a result, 1.27-μm lasing of a GaAs/sub 0.66/Sb/sub 0.34/-GaAs double-QW laser was obtained with a low-threshold current density of 440 A/cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> , which is comparable to that in conventional InP-based long-wavelength lasers. 1.30 μm lasing with a threshold current density of 770 A/cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> was also obtained by increasing the antimony content to 0.36. GaAsSb QW was found to be a suitable material for use in the active layer of a 1.3-μm vertical-cavity surface-emitting lasers.