Comprehensive physics-based breakdown model for reliability assessment of oxides with thickness ranging from 1 nm up to 12 nm

Abstract

The state-of-art understanding on the T <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">BD</sub> voltage acceleration models in direct tunneling (DT) and Fowler-Nordheim (FN) regimes is thoroughly and carefully reviewed including recent work on thin oxides as well as historical publication database for thick oxides. The field-driven T <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">BD</sub> exponential law is found to be inconsistent with many experimental findings. We present a comprehensive physics-based breakdown model, which separately takes the roles of tunneling current and defect generation efficiency into account, and it is consistent with many experimental findings for thickness from 1.0 nm to 12 nm. With these new advanced understandings, we can now resolve many controversies surrounding T <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">BD</sub> voltage acceleration models for SiO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> -based dielectrics. Finally, a practical solution of acceleration model for TDDB qualification is proposed.