Integration of a 90nm RF CMOS technology (200GHz f/sub max/ - 150GHz f/sub T/ NMOS) demonstrated on a 5GHz LNA

Abstract

The potential for low power RF systems on chip of a 90nm CMOS technology is demonstrated for the first time on a monolithic 5GHz low noise amplifier. This technology combines a portfolio of high Q passive components with high RF performances 70nm physical gate length NMOSFETs (200GHz f/sub max/ -150GHz f/sub T/) presenting a ratio power gain/current gain higher than 1 up to the maximum measurement frequency.