IEEE Transactions on Electron Devices · 1998 · 129 citations · 33 references
EngineeringElectrical EngineeringAnalog ElectronicsMicroelectronicsSemiconductor DevicesAnalog IntegrationCmos Circuit DesignComplementary Metal-oxide-semiconductor TechnologyHigh-frequency Semiconductor DevicesIntegrated Circuit DesignMetal-oxide-semiconductor Field-effect TransistorsBody EffectCmos Analog Circuit DesignCmos Analog Integrated CircuitsFully Depleted Silicon-on-insulator ScalingFully Depleted Silicon-on-insulator TransistorsGainTransconductanceTransconductance Amplifiers
Fully-depleted (FD) SOI MOSFETs offer near-ideal properties for analog applications. In particular their high transconductance to drain current ratio allows one to obtain a higher gain than from bulk devices, and the reduced body effect permits one to fabricate more efficient pass gates. The excellent behavior of SOI MOSFETs at high temperature or at gigahertz frequencies is outlined as well.
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Fernando Silveira, Denis Flandre, P.G.A. Jespers · IEEE Journal of Solid-State Circuits · 1996 · 650 citations
Low-power design: ways to approach the limits
Eric A. Vittoz · 2002 · 224 citations
Engineering, Computer Engineering, Electrical Engineering +14