IEEE Photonics Technology Letters · 1998 · 57 citations · 10 references
EngineeringElectrical EngineeringOptoelectronicsPhotonicsSemiconductor DevicesHigh-frequency Semiconductor DevicesMicrowave Semiconductor DevicesNonlinear Circuit AnalysisNonlinear OpticsPhotodetectorsCarrier RecombinationCarrier Recombination DynamicsCharge Carrier RecombinationCurrentsDepletion RegionP-i-n PhotodetectorsPhotodetectionPhotodiodes
We present photodetector compression measurements to demonstrate the consequences of absorption in undepleted regions close to the depletion region of p-i-n photodiodes. This absorption can modify the frequency response of photodetectors operating above a few milliamperes. The frequency response shows power dependence and additional ripple and rolloff.
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