IEEE Photonics Technology Letters · 1994 · 137 citations · 8 references
EngineeringElectrical EngineeringMicrowave EngineeringOptoelectronicsPhotonicsHigh-frequency Semiconductor DevicesMicrowave Device SimulationNonlinear OpticsOptoelectronic DevicesPhotodetectorsPhotonic Device SimulationCarrier Transport ModelingElectric Field EffectsNonlinear EffectsOptoelectronic Device ModelingP-i-n PhotodetectorsPhotodetectionSpace-charge DynamicsSpace-charge Effects
We present simulation results, based on a one-dimensional p-i-n photodetector model, to explain the reductions in photodetector response observed at high optical powers. The nonlinear effects are attributed to the redistribution of the internal electric field due to space-charge effects created by the photocarriers. The corresponding modification of the position-dependent charge velocities results in high-frequency response reduction, roll-off reduction, and pulse narrowing. Electric field redistribution leads to two dimensional effects, which must be included for accurate modeling of milliampere photocurrents.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
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Raman gain in glass optical waveguides
R. H. Stolen, E. P. Ippen · Applied Physics Letters · 1973 · 617 citations
Measurement of hole velocity in <i>n</i>-type InGaAs
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Engineering, Electrical Engineering, Electronic Materials +14
Nonlinearity of p-i-n photodetectors
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