A backside illuminated 400 × 400 charge-coupled device imager

Abstract

Large-area backside illuminated charge-coupled device imagers have been fabricated using double level aluminum transfer electrode technology. Devices with 100 × 160 and 400 × 400 resolution elements have been fabricated using buried channel technology for high charge transfer efficiency. Detailed optical characterization has been performed on these imagers over the temperature range -40 to +24°C and at several operating frequencies between 10 kHz and 1 MHz.