IEE Proceedings - Circuits Devices and Systems · 2002 · 37 citations · 4 references
Low-power ElectronicsElectrical EngineeringEngineeringVlsi DesignCurrent SensingSensing Delay TimeMixed-signal Integrated CircuitAnalog DesignComputer EngineeringμM Cmos TechnologySubmicron Cmos TechnologyMicroelectronicsComparative StudyElectronic Circuit
A comparison of different current mode sense amplifiers using 0.25 μm CMOS technology is presented. The sense amplifiers under consideration are suitable for current sensing in SRAM and Flash non-volatile memories. Simulation results are given regarding the sensing delay time for different power supply voltages Vdd and bit-line capacitance values. Comparative results are also provided for the energy dissipated per sensing operation, while worst-case and high-temperature simulations are included, in order to expose limitations of the sensors in various operating conditions.
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A 6-ns 1-Mb CMOS SRAM with latched sense amplifier
Teruo Seki, E. Itoh, Chiaki Furukawa et al. · IEEE Journal of Solid-State Circuits · 1993 · 65 citations
A 7-ns 140-mW 1-Mb CMOS SRAM with current sense amplifier
K. Sasaki, Koichiro Ishibashi, Kazuhiro Ueda et al. · IEEE Journal of Solid-State Circuits · 1992 · 55 citations