The Engineering of Silicon Wafer Material Properties Through Vacancy Concentration Profile Control and the Achievement of Ideal Oxygen Precipitation Behavior - Concepedia

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The Engineering of Silicon Wafer Material Properties Through Vacancy Concentration Profile Control and the Achievement of Ideal Oxygen Precipitation Behavior

45

Citations

10

References

1998

Year

R. Falster, D. Gambaro, M. Olmo, M. Cornara, H. W. Korb

MRS Proceedings

Materials EngineeringWafer Scale ProcessingEngineeringNanoelectronicsApplied PhysicsSemiconductor Device FabricationElectronic PackagingSilicon On InsulatorMicroelectronicsChemical Vapor Deposition

References

	Year	Citations

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