Low-temperature-deposited AlGaN interlayer for improvement of AlGaN/GaN heterostructure - Concepedia

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Low-temperature-deposited AlGaN interlayer for improvement of AlGaN/GaN heterostructure

88

Citations

8

References

2001

Year

Satoshi Kamiyama, Motoaki Iwaya, Nobuaki Hayashi, Tetsuya Takeuchi, Hiroshi Amano, Isamu Akasaki, Satoshi Watanabe, Yawara Kaneko, Norihide Yamada

Journal of Crystal Growth

Materials ScienceEngineeringAluminum Gallium NitrideApplied PhysicsGan Power DeviceLow-temperature-deposited Algan Interlayer

References

	Year	Citations

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