Conceptual design of advanced inductively coupled plasma etching tools using computer modeling

Abstract

Inductively coupled plasma (ICP) reactors for semiconductor etching are attractive in that the location of plasma generation and the plasma density can be controlled by placement of the inductive coils. This feature has been used to perform a conceptual design of an ICP etching tool having two plasma sources which provide additional control over the magnitude and composition of the reactive fluxes to the wafer. Images of plasma properties in the reactor are presented.