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Characterization of Copper Electromigration Dependence on Selective Chemical Vapor Deposited Cobalt Capping Layer Thickness
21
Citations
6
References
2011
Year
EngineeringChemical DepositionCo DepositionChemical EngineeringCorrosionCo FilmsElectronic PackagingCo CapElectrochemical InterfaceThin Film ProcessingMaterials ScienceMaterials EngineeringElectrical EngineeringElectromigration TechniqueElectrochemistryCopper Electromigration DependenceSurface ScienceThin FilmsChemical Vapor DepositionElectrical Insulation
Co films with various thicknesses were selectively deposited as Cu capping layers by chemical-vapor-deposition technique. Selectivity of the Co deposition between Cu and dielectric surfaces was improved by raising the deposition pressure. Degree of electromigration (EM) resistance enhancement was observed to be dependent on the deposited Co thickness. Compared to the no-Co control, significant EM lifetime enhancement was observed when the Co cap is thicker than 6 nm.
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