A novel tite buffered Cu-GeSbTe/SiO<inf>2</inf> electrochemical resistive memory (ReRAM)

Abstract

A novel solid-electrolyte based electrochemical induced conductive bridge (CB) resistive memory (ReRAM) is fabricated and characterized. The new device consists of a Cu-doped GeSbTe ion source, a SiO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> memory layer, and a TiTe ion buffer layer. The ion-buffer layer separates the Cu conducting path from the Cu-ion supply layer thus greatly increases the stability. This tri-layer device greatly improves reliability, yet maintains both low thermal budget BEOL processing and excellent electrical properties.