Green ThinGaN power‐LED demonstrates 100 lm

Abstract

Abstract Recent progress in the epitaxy of InGaN LEDs leads to a significant improvement of output power for green LEDs: 100 lm at 350 mA and 189 lm at 1 A are demonstrated for a 1 mm 2 ThinGaN Chip at 531 nm, mounted in an OSRAM Dragon package with spherical silicone lens and OSRAM Argus lens. The chip is especially designed for low current applications like LCD backlighting where high efficiencies are needed. Efficacies of 123 lm/W at 100 mA and 80 lm/W at 350 mA have been achieved with this LED. The Influence of Multi Quantum Well emission on LED brightness was investigated in respect of driving current and temperature. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)