Low-k interconnect stack with metal-insulator-metal capacitors for 22nm high volume manufacturing

Abstract

We describe interconnect features for Intel's 22nm high-performance logic technology, with metal-insulator-metal capacitors and nine layers of interconnects. Metal-1 through Metal-6 feature a new ultra-low-k carbon doped oxide (CDO) and a low-k etch stop. Metal-7 and Metal-8 use a low-k CDO. New materials and process optimization provide 13-18% capacitance improvement. Single-exposure patterning for 80nm pitch layers makes the process cost-effective.