IEEE Journal of Selected Topics in Quantum Electronics · 1995 · 181 citations · 25 references
EngineeringElectrical EngineeringPhysicsOptoelectronicsPhotonicsSemiconductor MaterialsLaser PhysicsQuantum ConfinementQuantum WellsSemiconductor HeterostructuresSemiconductor LasersStrain EngineeringAuger RecombinationDifferential GainGainQuantum Well LasersRadiative RecombinationSpin-orbit Coupling EffectsStrain EffectsStrained Quantum Wells
A complete model with the spin-orbit coupling for strained quantum-well lasers is presented. Explicit formulas for the momentum-matrix elements are given. The improvement in the threshold current density of tensile strained quantum-well lasers, as compared with that of the unstrained quantum well, is shown to result from the enhanced momentum matrix. The differential gain and the linewidth enhancement factor are calculated. The theoretical results show a smaller linewidth enhancement factor for compressively and tensile strained quantum wells than that of the unstrained structure, as has been experimentally observed. The temperature behavior of both the radiative component and the Anger component of the threshold current density is shown. Due to a decrease of gain and differential gain with increasing temperature, the threshold carrier density in unstrained quantum wells is increased with a large increment of the Auger recombination current at high temperature. For strained quantum wells, this increment is moderate because of the smaller threshold carrier density.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
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