Abstract

A new method of developing an "effective-mass" equation for electrons moving in a perturbed periodic structure is discussed. This method is particularly adapted to such problems as arise in connection with impurity states and cyclotron resonance in semiconductors such as Si and Ge. The resulting theory generalizes the usual effective-mass treatment to the case where a band minimum is not at the center of the Brillouin zone, and also to the case where the band is degenerate. The latter is particularly striking, the usual Wannier equation being replaced by a set of coupled differential equations.