IEEE Photonics Technology Letters · 2011 · 25 citations · 13 references
EngineeringMaterials SciencePhysicsOpticsPhotonicsSemiconductor MaterialsOptical SourcesPhotonic CrystalsPhotonic MaterialsQuantum ConfinementQuantum WellsSemiconductor LasersEdge-emitting LasersField ConfinementGallium Nitride (Gan) MaterialsOptical Confinement StructuresPhotonic Crystal LasersPulsed OperationQuantum Well LasersQuantum Well Structures
We report the fabrication of a GaN-based membrane-type photonic crystal (PC) band-edge laser (BEL) that requires a smaller PC active area than previous designs due to strong field confinement. A honeycomb-lattice PC was designed such that the Γ <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">1</sub> monopole band-edge mode fell within the emission band of InGaN quantum wells. The BEL exhibited pulsed lasing at room-temperature when optically pumped above its threshold pump energy density of ~ 15.5 mJ/cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> . Based on polarization angle analysis, we confirmed that the BEL indeed lased at the Γ <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">1</sub> monopole band-edge mode.
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GaN Photonic-Crystal Surface-Emitting Laser at Blue-Violet Wavelengths
Hideki Matsubara, Susumu Yoshimoto, H. Saito et al. · Science · 2007 · 365 citations