New negative resistance regime of heterostructure insulated gate transistor (HIGFET) operation

Abstract

We present experimental evidence for negative differential resistance in n-channel heterostructure insulated gate transistors (HIGFET's) at high gate voltages. The negative resistance is explained by an increase in the gate current related to the electron heating in the two-dimensional electron gas. This mechanism is similar to that causing the negative differential resistance in NERFET's. However, much smaller parasitic capacitance in HIGFET's may allow us to reach higher frequencies of operation.