Fermi-level pinning and chemical structure of InP–metal interfaces

L. J. Brillson, C. F. Brucker, A. D. Katnani, +3

Journal of Vacuum Science and Technology

Materials ScienceSurface CharacterizationInterface ChemistryX-ray SpectroscopyEngineering +13

Desorption induced by electronic transitions

N. H. Tolk, P. H. Bucksbaum, Neil Gershenfeld, +7

Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms

EngineeringPhysicsElectronic TransitionsNatural SciencesApplied Physics +7

Nature of the band discontinuities at semiconductor heterojunction interfaces

G. Margaritondo, A. D. Katnani, N. G. Stoffel, +2

Solid State Communications

SemiconductorsEngineeringPhysicsApplied PhysicsBand Discontinuities +2

Initial Adsorption State for Al on GaAs(110) and Its Role in the Schottky Barrier Formation

R. R. Daniels, A. D. Katnani, Te-Xiu Zhao, +2

Physical Review Letters

Materials ScienceInitial Adsorption StateIi-vi SemiconductorAluminium NitrideEngineering +10

A universal large/small signal 3-terminal FET model using a nonquasistatic charge-based approach

R. R. Daniels, A.T. Yang, J.P. Harrang

IEEE Transactions on Electron Devices

EngineeringNonquasistatic Charge-based ApproachPower Electronic SystemsPower ElectronicsElectromagnetic Compatibility +16

Systematics of chemical structure and schottky barriers at compound semiconductor-metal interfaces

L. J. Brillson, C. F. Brucker, A. D. Katnani, +3

Surface Science

SemiconductorsMaterials ScienceEngineeringCompound Semiconductor-metal InterfacesSurface Science +7

Quantum-well p-channel AlGaAs/InGaAs/GaAs heterostructure insulated-gate field-effect transistors with very high transconductance

R. R. Daniels, P.P. Ruden, M. S. Shur, +3

IEEE Electron Device Letters

SemiconductorsSemiconductor TechnologyElectrical EngineeringWide-bandgap SemiconductorEngineering +10

Quantum-well p-channel AlGaAs/InGaAs/GaAs heterostructure insulated-gate field-effect transistors

P.P. Ruden, M. S. Shur, D.K. Arch, +3

IEEE Transactions on Electron Devices

SemiconductorsSemiconductor TechnologyElectrical EngineeringSemiconductor DeviceEngineering +5

New negative resistance regime of heterostructure insulated gate transistor (HIGFET) operation

M. S. Shur, D.K. Arch, R. R. Daniels, +1

IEEE Electron Device Letters

Electrical EngineeringSemiconductor DeviceEngineeringPhysicsNanoelectronics +9

Deposition of Au overlayers onto cleaved (Hg,Cd)Te surfaces

Glyn Davis, W. Beck, N. E. Byer, +2

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films

Materials ScienceSurface CharacterizationFlat BandEngineeringSurface Chemistry +10