Concepedia

R. R. Daniels

RR

31

Publications

916

Citations

17

H-Index

1982

Active since

Affiliations

University of Wisconsin–Madison(Current)

University of Minnesota

Honeywell (United States)

Boeing (United States)

École Polytechnique Fédérale de Lausanne

R. R. Daniels is an author at University of Wisconsin–Madison specializing in engineering, applied physics, and physics.

Top concepts

EngineeringApplied PhysicsPhysicsSemiconductorsElectrical EngineeringMaterial ScienceMicroelectronicsCondensed Matter PhysicsSurface ScienceElectronic Devices

Publications per year

1982–2005

31

Publications

31

Fermi-level pinning and chemical structure of InP–metal interfaces

L. J. Brillson, C. F. Brucker, A. D. Katnani et al. · Journal of Vacuum Science and Technology · 1982 · 94 citations · Full text

Materials Science, Surface Characterization, Interface Chemistry +15

Desorption induced by electronic transitions

N. H. Tolk, P. H. Bucksbaum, Neil Gershenfeld et al. · Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms · 1984 · 83 citations · Full text

Engineering, Physics, Electronic Transitions +9

Nature of the band discontinuities at semiconductor heterojunction interfaces

G. Margaritondo, A. D. Katnani, N. G. Stoffel et al. · Solid State Communications · 1982 · 71 citations · Full text

Semiconductors, Engineering, Physics +4

Initial Adsorption State for Al on GaAs(110) and Its Role in the Schottky Barrier Formation

R. R. Daniels, A. D. Katnani, Te-Xiu Zhao et al. · Physical Review Letters · 1982 · 69 citations · Full text

Materials Science, Initial Adsorption State, Ii-vi Semiconductor +12

A universal large/small signal 3-terminal FET model using a nonquasistatic charge-based approach

R. R. Daniels, A.T. Yang, J.P. Harrang · IEEE Transactions on Electron Devices · 1993 · 61 citations

Engineering, Nonquasistatic Charge-based Approach, Power Electronic Systems +18

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