IEEE Photonics Technology Letters · 2006 · 19 citations · 11 references
EngineeringElectrical EngineeringMaterials ScienceOptoelectronicsSemiconductor DevicesSemiconductor MaterialsLight SourcesLight-emitting DiodesOptoelectronic DevicesOptoelectronic MaterialsSemiconductor Device MaterialsWide-bandgap SemiconductorsElectrical PropertiesElectrical Properties AnalysisGallium Nitride (Gan) MaterialsGallium Nitride Light-emitting DiodesGallium Nitride Power DevicesPower OutputQuantum Well Light-emitting DiodesSeries Resistance
We have demonstrated high-performance InGaN-GaN multiple quantum-wells light-emitting diodes (LEDs) using polarization-induced (PI) p-InGaN-GaN superlattice. Electrical measurements show that PI LEDs produce much lower series resistance and turn-on voltage (at 20 mA) as compared to those of normal LEDs without the superlattice. It is also shown that the output power and photon wavelength of the PI LEDs remain electrically stable up to a high stress region of 200 mA. However, those of normal LEDs become electrically and optically degraded in excess of 120 mA. These results show that the use of the PI effect is very effective to the improvement of the electrical properties of LEDs.
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