1986 · 25 citations · 0 references
EngineeringElectrical EngineeringMaterials ScienceMicroelectronicsSemiconductor DevicesSemiconductor MaterialsCmos Circuit DesignComplementary Metal-oxide-semiconductor TechnologyIntegrated Circuit DesignSemiconductor Device MaterialsSemiconductor InterfacesWafer BondingAmorphous SiliconBreakdown VoltageDirect Wafer BondingPower MosfetsSilicon Wafer ProcessingWafer MaterialsWafer-to-wafer Bonding
1800v and 1700v non-latch-up Bipolar-Mode MOSFETs have been developed, based on Silicon Wafer Direct Bonding (SDB) technique: a new substrate wafer fabrication process superior to conventional epitaxy. The SDB technique easily realizes an optimum N buffer structure as well as a high resistivity N <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">-</sup> layer. Self-aligned deep P <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">+</sup> diffusions, densified hole bypasses and an amorphous silicon resistive field plate have been implemented. 0.45µsec fall-time and more than 100A maximum current capability have been successfully realized.