Fundamental Materials-Issues involved in the Growth of GaN by Molecular Beam Epitaxy - Concepedia

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Fundamental Materials-Issues involved in the Growth of GaN by Molecular Beam Epitaxy

11

Citations

8

References

1994

Year

N. Newman, Tao Fu, X. Liu, Z. Liliental‐Weber, M. Rubín, J. Chan, E. Jones, J. Ross, I. M. Tidswell, K. M. Yu,

MRS Proceedings

Materials EngineeringMaterials ScienceEngineeringApplied PhysicsGan Power DeviceFundamental Materials-issuesMolecular Beam EpitaxyCategoryiii-v Semiconductor

References

	Year	Citations

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