Fundamental Materials-Issues involved in the Growth of GaN by Molecular Beam Epitaxy

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Natural Sciences, Materials Science, Physics +17

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Engineering, Materials Engineering, Materials Science +12

<i>p</i>-type gallium nitride by reactive ion-beam molecular beam epitaxy with ion implantation, diffusion, or coevaporation of Mg

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Engineering, Materials Engineering, Materials Science +17

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Engineering, Materials Science, Physics +17

Partitioning of ion-induced surface and bulk displacements

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Natural Sciences, Geophysics, Physics +8