IEEE Journal of Solid-State Circuits · 2004 · 61 citations · 12 references
EngineeringElectrical EngineeringCircuit TheoryMicroelectronicsSemiconductor DevicesCmos Circuit DesignDelay ModelingIntegrated Circuit DesignOscillatorsRadio-frequency Integrated CircuitsTiming AnalysisCmos OscillatorsFrequency-domain Circuit ModelingRf Cmos DesignRing OscillatorsRing ResonatorsSilicon-based Oscillators
An analytical equation for the oscillation frequency of a ring oscillator is derived. The derivation is done using a novel method which does not need to find an expression for the delay of each stage. The resulting equation includes the effect of time-varying parasitics. It also includes the effect of the gate resistance, which has a large effect on the oscillation frequency at high frequencies. Measurement results of ring oscillators fabricated in a 0.18-/spl mu/m CMOS process show that the resulting equation has an average error of 8% over a large range of parameter variations.
12
MOS transistor modeling for RF IC design
Christian Enz, Yuhua Cheng · IEEE Journal of Solid-State Circuits · 2000 · 280 citations · Full text