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Wafer bonding of damascene-patterned metal/adhesive redistribution layers for via-first three-dimensional (3D) interconnect
54
Citations
10
References
2005
Year
Unknown Venue
EngineeringIntegration Technology PlatformMechanical EngineeringInterconnect (Integrated Circuits)Wafer Scale ProcessingAdvanced Packaging (Semiconductors)Electronic PackagingWafer BondingMaterials ScienceMaterials Engineering3D Ic ArchitectureFabrication TechniqueDamascene PatterningChip AttachmentMicroelectronics3D PrintingMicrofabricationNew 3DSurface ScienceApplied Physics3D Integration
A novel via-first, back-end-of-the-line (BEOL) compatible, monolithic wafer-level three-dimensional (3D) integration technology platform is being developed, which employs wafer bonding of damascene-patterned metal/adhesive redistribution layers on two wafers, thus facilitating both high density of inter-wafer electrical interconnects and strong adhesive bond of two wafers in one unit processing step. Two key steps for this approach are 1) fabrication of a metal/adhesive redistribution layer on the top of the BEOL-processed wafer by damascene patterning and 2) face-to-face alignment and bonding of two wafers utilizing the metal/adhesive redistribution layers. Repeating a whole 3D process flow, the third wafer (or more) can then be added. Copper/tantalum (Cu/Ta) and benzocyclobutene (BCB) are selected as the metal and adhesive for the feasibility demonstration of the via-first 3D approach. Critical processing challenges are investigated, including: 1) BCB partial curing and patterning; 2) Ta and Cu deposition; 3) Cu/BCB chemical mechanical planarization (CMP); 4) post-CMP treatment; and 5) bonding process parameters. Wet chemical and dry plasma surface preparation techniques are used for post-CMP treatment and pre-bonding surface preparation, a critical step in facilitating a strong, reliable bond between BCB-to-BCB regions as well as a low contact resistance between Cu-to-Cu regions. Results on blanket BCB/Si wafers show a strong BCB-to-BCB bond with mean critical adhesion energy in a range of 14-31 J/m . For patterned Cu/BCB wafers, interfaces of bonded BCB-to-BCB, Cu-to-Cu, and BCB-to-Cu areas are imaged by focused ion beam scanning electron microscopy (FIB/SEM), showing the feasibility of these bonds. Specific contact resistance of the Cu-to-Cu interconnect is on the order of 1 /spl times/ 10/sup -7/ /spl Omega/-cm/sup 2/, a promising preliminary result indicating electrical contact is possible using this new 3D technology platform.
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