Determination of built-in-potential in N-I-P a-Si:H solar cells

Abstract

This paper describes a simple method to evaluate built-in-potential of P-N junction a-Si:H solar cells. Built-in-potential (V <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">bi</inf> ) was calculated from photovoltage-current characteristics at various temperature and illumination levels. Results from two independent, experimental techniques agree extremely well. V <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">bi</inf> = 1.02 eV ± 0.02 eV was obtained for a N-I-P cell having V <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">oc</inf> = 650 mV under AM1 illumination.