Cosmic ray neutron-induced soft errors in sub-half micron CMOS circuits

Abstract

We numerically investigated cosmic ray neutron-induced soft errors in sub-half micron CMOS SRAM and latch circuits at sea level. For our purpose, we developed an original simulator which reproduces well the experimental charge collection data. We investigated soft error rates (SERs) and showed that the neutron-induced SERs in the SRAM are the same order as those due to /spl alpha/-particles and the SERs in the latch are dominated by neutrons.