Improvement of high resistivity substrate for future mixed analog-digital applications

Abstract

Fully oxygen precipitated (FOP) wafers can suppress slip generation during the STI process and maintain high substrate resistivity. Additional boron implantation can suppress the leakage current between the adjacent wells due to shallow Xj. No effect on MOSFET characteristics by this implantation was observed. The high resistivity substrate (HRS) can provide good ESD performance and suppress the passage of high frequency signals through the substrate in resistors. Thus, HRS with FOP & additional implantation is effective for future mixed signal CMOS with RF circuits.