Indium channel implant for improved short-channel behavior of submicrometer NMOSFETs

Abstract

Indium has been used as an alternative channel implant in submicrometer-channel Si MOSFETs in order to obtain highly nonuniform channel doping. Superior device characteristics have been obtained down to 0.17- mu m channel length. The device characteristics have been compared to those of uniform boron-implanted short-channel MOSFETs used in a 0.25- mu m CMOS technology. Results indicate that NMOSFETs with nonuniform channel doping obtained with indium have superior short-channel effect (SCE) when compared to NMOSFETs with uniformly (boron) doped channel.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">&gt;</ETX>