All solid source molecular beam epitaxy growth of Ga<i>x</i>In1−<i>x</i>As<i>y</i>P1−<i>y</i>/InP lasers using phosphorus and arsenic valved cracking cells

Abstract

Growth of GaxIn1−xAsyP1−y on (001) InP by molecular beam epitaxy employing solid phosphorus and arsenic sources supplied via valved cracking cells was investigated. For growth temperatures between 430–525 °C, the incorporation of As and P was found to be strongly dependent upon the Ga mole fraction, substrate temperature, and incident As and P fluxes. The relative incorporation of As and P is nonlinearly related to the incident column V fluxes, with P incorporation being enhanced with increasingly higher growth temperatures. The data show that the quaternary could be grown lattice matched to InP across the entire wavelength range 1.15–1.65 μm, with strong photoluminescence emission. Heterojunction laser diodes subsequently fabricated with a broad range of emission wavelengths had threshold current densities as low as 1.7 kA/cm2 with differential quantum efficiencies as high as 28%.