K. Y. Cheng

Atomic-layer-deposited HfO2 on In0.53Ga0.47As: Passivation and energy-band parameters

Y. C. Chang, Mao Lin Huang, K. Y. Lee et al. · Applied Physics Letters · 2008 · 112 citations

Natural Sciences, Materials Engineering, Materials Science +17

Characterization of GaAs-based n-n and p-n interface junctions prepared by direct wafer bonding

Frank F. Shi, Kuo-Lih Chang, J. H. Epple et al. · Journal of Applied Physics · 2002 · 47 citations

Engineering, Electrical Engineering, Materials Science +17

Improvement of wet-oxidized AlxGa1−xAs (x∼1) through the use of AlAs/GaAs digital alloys

Gregory Pickrell, J. H. Epple, K. L. Chang et al. · Applied Physics Letters · 2000 · 44 citations

Natural Sciences, Materials Engineering, Materials Science +17

Liquid-phase-epitaxial growth of In0.49Ga0.51P on (100) GaAs by a supercooling method

Meng‐Chyi Wu, Yan Su, K. Y. Cheng et al. · Journal of Applied Physics · 1985 · 39 citations

Engineering, Electrical Engineering, Materials Science +17

Electrical characteristics of InP grown by molecular beam epitaxy using a valved phosphorus cracking cell

James N. Baillargeon, A. Y. Cho, R. Fischer et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 1994 · 37 citations

Engineering, Materials Engineering, Materials Science +14