Electrical transport characterization of nano CMOS devices with ultra-thin silicon film

Abstract

The mobility and, more generally, the transport parameters of MOS devices are key quantities for the performance evaluation in advanced CMOS technologies. In this work, a review of the main mobility results obtained in short channel devices (here GAA/DG, FD-SOI MOSFETs and FinFETs) are presented and discussed for better understanding their transport limitations and, in turn, their performances.