Managing Losses in Through Silicon Vias with Different Return Current Path Configurations

Abstract

The high bulk conductivity of silicon, leading to high attenuation, will become a significant challenge for designers of silicon-based system-in-package modules. In this paper, losses in TSV interconnect schemes are quantified with full-wave simulations. Several techniques for optimizing transmission using different return current paths are investigated, including ground shielding vias and two coaxial via structures. Then, a comparison of the losses in structures with different return current paths is made.