Heavy-Ion and Total Ionizing Dose (TID) Performance of a 1 Mbit Magnetoresistive Random Access Memory (MRAM)

Abstract

An MRAM is a nonvolatile memory that has been demonstrated and supports heavy ion immunity to an LET of approximately 69 MeV-cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> /mg for fluences to 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">8</sup> ions/cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> ; and TED hardness in excess of 1 Mrad.