Publication | Closed Access
High‐Current‐Density CuO <sub>x</sub>/InZnO<sub>x</sub> Thin‐Film Diodes for Cross‐Point Memory Applications
121
Citations
14
References
2008
Year
SemiconductorsMaterials ScienceElectrical EngineeringElectronic DevicesHigh-temperature-prepared Silicon DiodesElectronic MaterialsEngineeringOxide ElectronicsEmerging Memory TechnologyApplied PhysicsSemiconductor MemoryThin FilmsCross‐point Memory ApplicationsPromising Switch ElementCompound SemiconductorSemiconductor DeviceOxide Diode
Room-temperature-deposited CuOxInZnOx thin-film heterojunction diodes show a high current density of 3.5 × 104 A cm−2 and a high on/off current ratio of 106 (see figure). The oxide diode is a promising switch element for three-dimensional stackable memory devices, where high-temperature-prepared silicon diodes are difficult to apply.
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