IEEE Microwave and Wireless Components Letters · 2003 · 35 citations · 4 references
EngineeringElectrical EngineeringMicroelectronicsMicrowave EngineeringSemiconductor DevicesHigh-frequency Semiconductor DevicesIntegrated Circuit FabricationMicrowave Integrated CircuitsMicrowave OscillatorsOscillatorsRadio-frequency Integrated CircuitsHigh-frequency ElectronicsLow-phase-noise OscillatorsMetallizationMillimeter-wave Integrated CircuitsMillimeter-wave TransistorsPhase NoiseSilicon Microwave Integrated CircuitsSilicon-based Oscillators
Multipurpose VCOs with wide tuning range and oscillation frequencies up to 74 GHz (on wafer) and 69 GHz (mounted chip, with output buffer), respectively, have been fully integrated in a commercial SiGe production technology. To the best of the authors' knowledge these are record values for commercially available Si-based technologies, despite the moderate transistor f/sub T/ (62 GHz). The oscillation frequency can easily be dropped down to 41.5 GHz by cutting interconnection lines in the upper metallization layer. The phase noise obtained depends on the frequency range chosen and is sufficiently low for the intended applications.
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