Avalanche photodiodes with an impact-ionization-engineered multiplication region

Peng Yuan, S. Wang, Xiaoli Sun, X.G. Zheng, A.L. Holmes, Joe C. Campbell

IEEE Photonics Technology Letters · 2000 · 76 citations · 92 references

Concepts

Abstract

We demonstrate an impact-ionization-engineered structure for the multiplication region of avalanche photodiodes. By enhancing the control of the impact-ionization position, the structure achieved high gain, low dark current, and very low noise.

References

92