2008 · 26 citations · 7 references
EngineeringElectrical EngineeringMaterials ScienceElectronic MaterialsMicroelectronicsSemiconductor DevicesCurrent-voltage CharacteristicsLinear Circuit AnalysisMemristive MaterialsNanoelectronicsNonlinear Circuit AnalysisOhm's LawCrossbar Array MaterialsCrossbar SwitchingMemristive Crossbar ArraysNon-ohmic MaterialsNonlinear ResistanceResistive Switching MaterialsTransistor Nonlinearity
While materials with a linear IV-characteristic yield in a practically unusable voltage swing when used in crossbar arrays, materials with a nonlinear IV-curve were expected to yield better results. With a fundamental analytical approach, we can show that the gain is theoretically limited to the square root of the number of word lines used in the crossbar. Furthermore the degree of nonlinearity must not exceed a certain value, otherwise the voltage swing decreases. TiO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> with its nonlinear IV-characteristic outperforms any possible material with a linear IV-characteristic but the voltage swing for large crossbars is still below 10%V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">DD</sub> and would demand for high costly sense amplifiers.
7
Nanoionics-based resistive switching memories
Rainer Waser, Masakazu Aono · Nature Materials · 2007 · 4.8K citations
Natural Sciences, Materials Engineering, Materials Science +12
Circuit Fabrication at 17 nm Half-Pitch by Nanoimprint Lithography
Gun Young Jung, Ezekiel Johnston‐Halperin, Wei Wu et al. · Nano Letters · 2006 · 169 citations