Concepedia

Crossbar Array Materials

Crossbar Array Materials is a class of functional materials engineered to enable the fabrication of memristive crossbar array architectures, distinguished by their ability to serve as the active switching medium in high-density, two-terminal resistive memory or neuromorphic computing systems arranged in a perpendicular electrode matrix.

32

Publications

2.4K

Citations

169

Authors

57

Institutions

Publications per year

2017–2026

23

Parents

Publications

32

Memristor crossbar arrays with 6-nm half-pitch and 2-nm critical dimension

Shuang Pi, Can Li, Hao Jiang et al. · Nature Nanotechnology · 2018 · 526 citations

, , +14

Wafer-scale integration of two-dimensional materials in high-density memristive crossbar arrays for artificial neural networks

Shaochuan Chen, Mohammad Reza Mahmoodi, Yuanyuan Shi et al. · Nature Electronics · 2020 · 434 citations

, , +17

Three-dimensional crossbar arrays of self-rectifying Si/SiO2/Si memristors

Can Li, Lili Han, Hao Jiang et al. · Nature Communications · 2017 · 227 citations · Full text

, , +17

Memristive Crossbar Arrays for Storage and Computing Applications

Huihan Li, Shaocong Wang, Xumeng Zhang et al. · Advanced Intelligent Systems · 2021 · 190 citations · Full text

, , +14

2D Layered Materials for Memristive and Neuromorphic Applications

Advanced Electronic Materials · 2019 · 122 citations · Full text

, , +17

1–5 of 32

Authors

169

  1. PL
    Peng Lin

    University of Massachusetts Amherst, United States

    3 publications · 473 citations

    3

    h-index

  2. JJ
    J. Joshua Yang

    Hewlett-Packard (United States), United States

    2 publications · 258 citations

    2

    h-index

  3. WF
    Wanxiang Feng

    Beijing Institute of Technology, China

    2 publications · 246 citations

    2

    h-index

  4. CL
    Can Li

    University of Massachusetts Amherst, United States

    2 publications · 753 citations

    2

    h-index

  5. HL
    Huolin L. Xin

    Brookhaven National Laboratory, United States

    2 publications · 753 citations

    2

    h-index

1–5 of 169

Institutions

57

  1. Seoul National University

    Seoul, South Korea

    4 h-index

    25 publications

    1.5K citations

  2. Institute of Microelectronics

    Beijing, China

    4 h-index

    16 publications

    600 citations

  3. Technion – Israel Institute of Technology

    Haifa, Israel

    3 h-index

    3 publications

    680 citations

  4. Peking University

    Beijing, China

    3 h-index

    8 publications

    504 citations

  5. RWTH Aachen University

    Aachen, Germany

    3 h-index

    8 publications

    192 citations

  6. University of Massachusetts Amherst

    Amherst Center, United States

    3 h-index

    17 publications

    4.4K citations

  7. National University of Singapore

    Singapore, Singapore

    3 h-index

    17 publications

    466 citations

  8. Forschungszentrum Jülich

    Jülich, Germany

    2 h-index

    9 publications

    228 citations

1–8 of 57

Venues

  1. Microelectronic Engineering

    4 publications · 89 citations

    4

    h-index

  2. Applied Physics Letters

    3 publications · 128 citations

    3

    h-index

  3. IEEE Electron Device Letters

    3 publications · 78 citations

    3

    h-index

  4. Advanced Electronic Materials

    2 publications · 175 citations

    2

    h-index

  5. Nature Nanotechnology

    2 publications · 624 citations

    2

    h-index

1–5